Abstract: In this letter, a 1.7–6.5-GHz reactively matched power amplifier (RMPA) is designed using a 0.2-$\mu $ m gallium nitride (GaN) high-electron mobility transistor (HEMT) process. To achieve an ...
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Abstract: Globally, in recent years, there has been considerable research and development for the design, manufacturing, and large-scale implementation of renewable energy sources (RES). This is in ...
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