Allegro MicroSystems, LLC announces the release of a new high-voltage (600 V), BLDC MOSFET gate driver IC. This new device is designed for high voltage motor control for Hybrid, Electric Vehicle and ...
June 20, 2011 – National Semiconductor Corp. today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect ...
Analog Devices has created a stand-alone 100V half-bridge driver for GaN power hemts “with a propagation delay of 10ns and delay matching of 1.5ns between the top and bottom channels, making it ...
A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly ...
Members can download this article in PDF format. High efficiency and high power density are critical characteristics when designing power supplies for today’s products. To achieve these goals, ...
One common question asked when considering what gate driver to use for an application is: what is the peak current that a driver can deliver? Peak current is one of the most important parameters in ...
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