The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...

There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

Combining GaN transistors with silicon-based digital circuits enables complex computing functions built directly into power ...

Mayank Shrivastava (third from right) holding a representative power device 8” wafer, with some of his PhD students who work on various aspects of GaN Power and RF technology (Photo credit: IISc) ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

Based on high-frequency high-voltage vertical field-effect transistors (HVVFETs), the HVV1011-300, HVV1214-025, and HVV1214-100 power transistors deliver frequency bandwidth, voltage level, and power ...

BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...