Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Check out more Kit Close-Up videos. This video is also part of the TechXchange: Silicon Carbide (SiC). As electric vehicles are equipped with 400- to 800-V battery packs, the power systems under the ...

ST’s galvanically isolated automotive gate driver for SiC MOSFETs and IGBTs gives flexibility to control inverters of different power ratings featuring programmable protections and diagnostics that ...

SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage ...

TI introduced several new isolated gate drivers that provide monitoring and protection for high-voltage systems. The devices are claimed to be the first to offer integrated sensing features for IGBTs ...

Silicon-carbide (SiC) MOSFETs have made significant inroads in the power semiconductor industry thanks to a range of benefits over silicon-based switches. These include faster switching, higher ...

Linear Technology's LTC4361 is a 2.5 to 5.5V overvoltage and overcurrent protection controller designed to safeguard low voltage, portable electronics from damaging input voltage transients and ...

Nisshinbo Micro Devices has released the NB7123 and NB7130, two 1-cell Li-ion battery protection ICs in an ultra-small WLCSP package. Li-ion battery protection ICs Credit: Nisshinbo Micro Devices ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...