For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection ...
SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...
ST’s galvanically isolated automotive gate driver for SiC MOSFETs and IGBTs gives flexibility to control inverters of different power ratings featuring programmable protections and diagnostics that ...
Bosch has announced its 3rd generation SiC MOSFETs, based on the company's dual-channel trench SiC architecture with lower on ...
Silicon-carbide (SiC) MOSFETs have made significant inroads in the power semiconductor industry thanks to a range of benefits over silicon-based switches. These include faster switching, higher ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection ...
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