ON Semiconductor has announced two 1200-V silicon carbide (SiC) MOSFET 2-pack modules for the electric vehicle (EV) market, ahead of APEC 2021. The SiC MOSFET modules, based on planar technology, can ...
SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC ...
The MSK3003 is a 3-phase bridge MOSFET power module that employs space efficient isolated ceramic tab power SIP package. This device interfaces directly with most brushless motor drive IC’s without ...
ON Semiconductor has announced a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing the company's range of products suitable for the electric vehicle (EV) market. When ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
ROHM has integrated VCSEL technology with MOSFET drivers in a module to achieve the shorter pulses and high output required for more accurate sensing. Conventionally, in VCSEL-equipped laser light ...
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “ MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings ...
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