Scientists at Forschungszentrum Jülich have fabricated a new type of transistor from a germanium–tin alloy that has several advantages over conventional switching elements. Charge carriers can move ...
A research team from IBM and the Georgia Institute of Technology has demonstrated the first silicon-germanium transistor able to operate at frequencies above 500 GHz. Though the record performance was ...
A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology ...
AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have made ...
A research team has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous ...
There was once a company which achieved the remarkable feat of getting the first junction transistor to market. The company manufactured the device in 1952, the same year as the inventors of the ...
At the Forschungszentrum Jülich, a new kind of transistor from germanium–tin alloy has been fabricated by scientists. The alloy comes with numerous benefits over traditional switching elements. The ...
It might look like something out of Tron, but you’re actually looking at a new type of transistor made out of germanium—which is four times faster than those currently in use. The new transistor, ...
(Nanowerk News) A research collaboration consisting of IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology has demonstrated the world's fastest ...
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