As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...
With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the ...
Synopsys, Inc. (Nasdaq:SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced certification and immediate ...
The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...
TSMC's has disclosed that its 3nm process will continue to adopt a FinFET structure, but the foundry reportedly will take a new approach to its 2nm chip development, replacing FinFET with GAA ...
TSMC and Global Foundries have already announced their plans for 14nm and 16nm FinFET chips, that they should start building in 2014, and then we’ll probably see them no sooner than 2015, which is ...
HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...
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Silicon-proven DesignWare PHY IP on TSMC's 7nm FinFET process includes USB, DDR, LPDDR, HBM, PCI Express, MIPI, DisplayPort, and Ethernet Successful customer tapeouts of DesignWare Logic Libraries and ...
Intel Corporation today announced a detailed process and packaging technology roadmaps of “foundational innovations” for products through 2025 and beyond. In addition to announcing RibbonFET, its ...
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